Next-Generation TrenchFET(R) Gen IV 30 V N-Channel Power MOSFETs Feature On-Resistance Down to 1.0 Milliohm at 10 V and 1.35 Milliohms at 4.5 V
MALVERN, PA -- (Marketwire) -- 05/07/12 -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced the first devices in its next-generation TrenchFET® Gen IV family of 30 V n-channel power MOSFETs. Utilizing a new high-density design, the SiRA00DP, SiRA02DP, SiRA04DP, and SiSA04DN offer industry-low on-resistance down to 1.35 milliohms at 4.5 V and low Miller charge, Qgd, down to 1.8 nC in the PowerPAK® SO-8 and 1212-8 packages.
The new Vishay Siliconix TrenchFET IV power MOSFETs incorporate technological improvements in silicon design, wafer processing, and device packaging to deliver a number of benefits to designers of today's power electronics systems. With a reduction in on-resistance times silicon area of over 60 % compared with previous-generation devices, the SiRA00DP is able to demonstrate extremely low RDS(on) values of 1.0 milliohm at 10 V and an industry-best 1.35 milliohms at 4.5 V. For designers, the MOSFETs' low on-resistance translates into lower conduction losses for reduced power consumption and higher efficiency.
TrenchFET Gen IV MOSFETs offer a new structure that utilizes a very high-density design without significantly increasing the gate charge, overcoming a problem often associated with high cell count devices. The MOSFETs released today offer low total gate charge and therefore low on-resistance times gate charge figures of merit (FOM) down to 56 nC-ohms at 4.5 V for the SiRA04DP.
The SiRA00DP, SiRA02DP, and SiRA04DP provide increased system efficiency and lower temperatures in the 6.15 mm by 5.15 mm PowerPAK SO-8 package while the SiSA04DN offers similar efficiency with a third of the size in the 3.30 mm by 3.30 mm PowerPAK 1212-8 package. All of the devices released today offer a very low Qgd/Qgs ratio of 0.5 or less. This lower ratio can help to prevent shoot-thru by lowering gate-induced voltages.
The SiRA00DP, SiRA02DP, SiRA04DP, and SiSA04DN are optimized for high power density DC/DC converters, synchronous rectification, synchronous buck converters, and OR-ing applications. Typical end products include switch mode power supplies, voltage regulator modules (VRMs), POLs, telecom bricks, PCs, and servers.
The TrenchFET Gen IV devices are 100 % Rg- and UIS-tested. They are halogen-free according to the IEC 61249-2-21 definition and RoHS-compliant.
Complete details on all products in the TrenchFET Gen IV family are available here: http://www.vishay.com/mosfets/trenchfet-gen-iv/.
Vishay Siliconix was the industry's first supplier to introduce Trench power MOSFETs. The company's TrenchFET intellectual property includes numerous patents, including fundamental technology patents dating from the early 1980s. Each new generation of TrenchFET technology yields products that raise the bar for power MOSFET performance in a wide range of computing, communications, consumer electronics, and many other applications.
Samples of the TrenchFET Gen IV MOSFETs are available now. Production quantities will be available in Q1 2012 with lead times of 12 weeks for large orders. Follow TrenchFET Gen IV power MOSFETs at http://twitter.com/vishayindust.
Vishay Intertechnology, Inc., a Fortune 1,000 Company listed on the NYSE (NYX) (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay's product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at www.vishay.com.
TrenchFET and PowerPAK are registered trademarks of Siliconix incorporated
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Source: Vishay Intertechnology, Inc.