Cree Expands Product Offering with Very Low Basal Plane Dislocation 4H Silicon Carbide Epitaxial Wafers
DURHAM, N.C.--(BUSINESS WIRE)-- Cree, Inc. (CREE) announces its latest silicon carbide (SiC) offering with low basal plane dislocation (LBPD) 100-mm 4H SiC epitaxial wafers. This LBPD material exhibits a total BPD density of < 1 cm-2 in the epitaxial drift layer, with BPDs capable of causing Vf drift as low as < 0.1 cm-2. This low BPD material further demonstrates Crees long-standing commitment to continuous improvement and investment in SiC materials technology.
Bipolar devices in SiC have long been held back by forward voltage degradation caused by the presence of BPDs, said John Palmour, CTO, Cree Power & RF. This Low BPD material enables very high voltage bipolar devices such as IGBTs (insulated-gate bipolar transistors) and GTOs (gate turn-off thyristor) to have improved stability over time. This recent development helps remove roadblocks to commercialization of these extremely high power devices.
SiC is a high-performance semiconductor material used in the production of a broad range of lighting, power and communication components, including light-emitting diodes (LEDs), power switching devices and RF power transistors for wireless communications.
Low BPD epitaxial wafers are available for purchase immediately. To discuss your application and material needs, please contact the Cree Materials Sales team at Materials_Sales@cree.com.
Cree is leading the LED lighting revolution and making energy-wasting traditional lighting technologies obsolete through the use of energy-efficient, mercury-free LED lighting. Cree is a market-leading innovator of lighting-class LEDs, LED lighting, and semiconductor products for power and radio-frequency (RF) applications.
Cree's product families include LED fixtures and bulbs, blue and green LED chips, high-brightness LEDs, lighting-class power LEDs, power-switching devices and RF devices. Cree products are driving improvements in applications such as general illumination, electronic signs and signals, power supplies and solar inverters.
For additional product and company information, please refer to www.cree.com.
This press release contains forward-looking statements involving risks and uncertainties, both known and unknown, that may cause actual results to differ materially from those indicated. Actual results may differ materially due to a number of factors, including the risk that we may be unable to manufacture these new products with sufficiently low cost to offer them at competitive prices or with acceptable margins; the risk we may encounter delays or other difficulties in ramping up production of our new products; customer acceptance of our new products; the rapid development of new technology and competing products that may impair demand or render Crees products obsolete; and other factors discussed in Crees filings with the Securities and Exchange Commission, including its report on Form 10-K for the year ended June 24, 2012, and subsequent filings.
Cree® is a registered trademark of Cree, Inc.
Gena Fiegel, 919-407-7651
Source: Cree, Inc.Copyright Business Wire 2012