RFMD Releases Family of Linear GaN Power Transistors
MUNICH, Germany, Nov. 13, 2012 (GLOBE NEWSWIRE) -- RF Micro Devices, Inc. (RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced that RFMD has production released two highly linear gallium nitride (GaN) RF unmatched power transistors (UPTs)RFHA3942 (35W) and RFHA3944 (65W)that deliver superior linear performance versus competing GaN transistors.
The release of the RFHA3942 and RFHA3944 follows the previous release of the RF393X series of UPTs targeting continuous wave (CW) and pulsed peak power applications. This new series of linear GaN discrete amplifiers is optimized for broadband applications requiring linear back-off operation or reduced spurious performance. RFMD plans to further its technology leadership position with future releases of 10W and 95W linear GaN devices over the next 12 months, significantly expanding the GaN UPT options available to RFMD's customers.
RFMD's highly linear GaN UPTs target new and existing communication architectures requiring improved broadband linear performance in support of high peak-to-average modulation waveforms. The RFHA3942 and RFHA3944 are tunable over a broad frequency range (DC to 4GHz) and provide CW peak power of 35W and 65W respectively. They also offer high gain of 15dB and high peak efficiency of >55%. Using an IS95 9.8dB PAR signal tuned to 2.1GHz, the RFHA3942 achieves -43dBc adjacent channel power (ACP) at 34dBm POUT and the RFHA3944 achieves -54dBc ACP at 37dBm POUT. Additionally, the RFHA3942 and RFHA3944 offer high terminal impedance at the input and output of the package, enabling wideband gain and power performance advantages in a single amplifier. The RFHA3942 and RFHA3944 are packaged in a flanged ceramic two-leaded package that leverages RFMD's advanced heat-sink and power-dissipation technologies to deliver excellent thermal stability and conductivity.
Jeff Shealy, vice president and general manager of RFMD's Power Broadband business unit, said, "RFMD is very pleased to expand its GaN-based product portfolio, offering industry-leading linear power performance in support of diverse end markets. RFMD's GaN product portfolio clearly demonstrates our continued commitment to technology and product leadership, and we look forward to introducing additional GaN devices that feature superior power density, high efficiency, rugged dependability, and 'green' power consumption advantages."
RFMD is showcasing a broad portfolio of industry-leading RF components at the Electronica 2012 trade show in Munich, Germany, November 13-16, Stand #A4.134. Samples and production quantities are available now through RFMD's online store or through local RFMD sales channels. Datasheets can be obtained via RFMD's website at www.rfmd.com or by contacting RFMD at 336-664-1233.
RF Micro Devices, Inc. is a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies. RFMD's products enable worldwide mobility, provide enhanced connectivity and support advanced functionality in the mobile device, wireless infrastructure, wireless local area network (WLAN or WiFi), cable television (CATV)/broadband, Smart Energy/advanced metering infrastructure (AMI), and aerospace and defense markets. RFMD is recognized for its diverse portfolio of semiconductor technologies and RF systems expertise and is a preferred supplier to the world's leading mobile device, customer premises and communications equipment providers.
Headquartered in Greensboro, N.C., RFMD is an ISO 9001-, ISO 14001-, and ISO/TS 16949-certified manufacturer with worldwide engineering, design, sales and service facilities. RFMD is traded on the NASDAQ Global Select Market under the symbol RFMD. For more information, please visit RFMD's web site at www.rfmd.com .
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Source: RF Micro Devices 2012 GlobeNewswire, Inc.