TSMC's Rebuttal Of Intel's Scaling Advantage Is Just Qualitative, Not Quantitative

Jeff Groff profile picture
Jeff Groff
103 Followers

Summary

  • At its fall 2013 investor meeting, Intel suggested the company will enjoy a 35% scaling advantage over TSMC at the 14 nm node and a ~45% advantage at 10 nm.
  • TSMC issued a rebuttal during a recent conference call suggesting a much smaller Intel advantage at 14 nm that disappears at 10 nm.
  • TSMC stated that the need for this rebuttal was due to Intel's slide being based on outdated data.
  • Presumably, this meant TSMC had more up-to-date data to share.
  • However, my analysis shows that the figure TSMC showed in rebuttal was not a plot of actual data. It was just a qualitative drawing.

In a previous article, I presented an analysis of the following slide presented at Intel's (NASDAQ:INTC) fall 2013 investor meeting proclaiming Intel's scaling advantage over TSMC (NYSE:TSM) beginning at the 14 nm node. The TSMC data plotted on the slide is based on an assessment of remarks made during the TSMC keynote at the 2012 ARM TechCon. Intel's message is that while TSMC will have trouble scaling bellow 20 nm, Intel will not. As a consequence, Intel forecasts a 35% scaling advantage at 14 nm FinFET vs. TSMC's 16 nm FinFET and the advantage grows to ~45% at 10 nm. In this article I pointed out that if Intel is able to ramp its 10 nm process before TSMC does, products made on Intel's 10 nm process will be competing against those made on TSMC's 16 nm process and Intel's scaling advantage will be more like 64%.

(source: Intel 2013 Investor Meeting)

TSMC's Rebuttal Of Intel's Scaling Advantage

A reader reminded me in the comments that TSMC made a rebuttal of Intel's claim in its recent conference call. In this rebuttal (summarized here), TSMC stated that Intel's forecast was based on outdated data. They went on to state that while the Intel forecast shows TSMC's scaling actually getting marginally worse at 16 nm FinFET, TSMC is now predicting ~15% smaller chips at 16 nm followed by "industry leading performance and density" at 10 nm. Here is an excerpt from the TSMC conference call:

We take the approach of significantly using the FinFET transistor to improve the transistor performance on top of the similar back-end technology of our 20-nanometer. Therefore, we leverage the volume experience in the volume production this year to be able to immediately go down to the 16 volume production next year, within 1 year, and this transistor performance and innovative

This article was written by

Jeff Groff profile picture
103 Followers
I am an physics professor who takes a long-term value approach to investing.

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